STB/P432S
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
C
=25
°
C unless otherwise noted
)
4
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=32V , V
GS
=0V
Min
40
Typ
Max
Units
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
V
GS
= ±20V , V
DS
=0V
1
±100
1
1.7
7
9
26
1600
280
150
20
21
45
16
32
15
3.5
7.3
30
0.95
1.3
3
9
11
uA
nA
V
m ohm
m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
A
V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=30A
V
GS
=4.5V , I
D
=28A
V
DS
=10V , I
D
=30A
Forward Transconductance
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
c
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
Rise Time
t
D(OFF)
Turn-Off Delay Time
tf
Fall Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
V
DS
=15V,V
GS
=0V
f=1.0MHz
V
DD
=15V
I
D
=30A
V
GS
=10V
R
GEN
=3.3 ohm
V
DS
=15V,I
D
=30A,V
GS
=10V
V
DS
=15V,I
D
=28A,V
GS
=4.5V
V
DS
=15V,I
D
=30A,
V
GS
=10V
Gate-Drain Charge
c
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
I
S
V
SD
Diode Forward Voltage
V
GS
=0V,I
S
=30A
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=1.25mH,R
G
=25
Ω
,V
DD
= 20V.(See Figure13)
Jun,24,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
