STB/P432S
Ver 1.0
60
V G S =4 V
20
T j =125 C
50
I
D
, Drain Current(A)
I
D
, Drain Current(A)
V G S = 4.5V
15
-55 C
10
25 C
40
V G S = 10V
30
20
V G S =3 V
5
10
V G S = 2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0
0.8
1.6
2.4
3.2
4.0
4.8
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
15
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0
V
G S
=10V
I
D
=30A
V
G S
=4.5V
I
D
=28A
12
R
DS(on)
(m
Ω
)
V G S = 4.5V
9
6
V G S = 10V
3
1
1
12
24
36
48
60
R
DS(on)
, On-Resistance
Normalized
0
25
50
75
100
125
150
T j (
°C )
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
I
D
=250uA
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
V
DS
=V
G S
I
D
=250uA
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,24,2008
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
