S T A6610
V
G S
, G ate to S ource V oltage (V )
900
750
10
8
6
4
2
0
V
DS
=15V
I
D
=7A
C, Capacitance (pF)
Ciss
600
450
300
Coss
150
Crss
0
0
5
10
15
20
25
30
6
0
2
4
6
8
10
12
14 16
V
DS
, Drain-to Source Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 8. C apacitance
250
S witching T ime (ns )
I
D
, Drain C urrent (A)
Tr
F igure 9. G ate C harge
40
10
S
100
60
10
R
D
(
)
ON
L im
it
10m
100
ms
s
T D(off)
Tf
T D(on)
11
DC
1s
1
1
V DS =15V ,ID=7A
V G S =10V
0.1
0.03
V
G S
=10V
S ingle P ulse
T
A
=25 C
0.1
1
10
30 50
6 10
60 100 300 600
R g, G ate R es is tance (
Ω
)
F igure 11.s witching characteris tics
V
DS
, Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
9
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1.
2.
3.
4.
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
