S T A 6610
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
V
DS
= 15V, V
GS
= 10V
V
DS
= 10V, I
D
=7A
Min Typ
C
Max Unit
30
1
10
1.0
1.8
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
uA
uA
V
m ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
3
23
17
23
35
m ohm
A
S
P
F
P
F
P
F
20
15
620
190
115
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
2
V
DD
= 15V,
I
D
= 7A,
R L=2.1 ohm,
V
GS
= 10V,
R
GEN
=
6 ohm
V
DS
=15V, I
D
=7A,V
GS
=10V
V
DS
=15V, I
D
=7A,V
GS
=4.5V
V
DS
=15V, I
D
= 7A,
V
GS
=10V
13
14.4
40
8.4
13
6.8
1.5
3.5
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
