S T A6610
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
b
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.8
1.2
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Notes
a.Surface Mounted on FR4 Board,t 10sec.
b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.
c.Guaranteed by design,not subject to production testing.
5
40
V
GS
=10V
32
V
GS
=4V
V
GS
=4.5V
20
16
I
D
, Drain Current(A)
I
D
, Drain Current (A)
V
GS
=3.5V
24
Tj=125 C
12
-55 C
25 C
16
V
GS
=3V
8
V
GS
=2.5V
0
0
0.5
1
1.5
2
2.5
3
8
4
0
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
48
1.75
Figure 2. Transfer Characteristics
R
DS (ON)
, On-R es is tance
Normalized
40
1.60
1.45
1.30
1.15
1.00
0.85
-25
V
G S
=4.5V
I
D
=5A
V
G S
=10V
I
D
=7A
R
DS (on)
(m
Ω
)
32
24
16
8
1
V
G S
=4.5V
V
G S
=10V
1
8
16
24
32
40
0
25
50
75
100
125 150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
