S DM8401
E L E C T R IC A L C HA R A C T E R IS T IC S (T
A
=25 C unles s otherwis e noted)
TypC Max
P arameter
C ondition
Min
Unit
V
S ymbol
b
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
V
G S = 0V, Is =1.7A N-C h
G S = 0V, Is =-1.7A P -C h
0.77
-0.80
1.2
-1.2
Diode F orward Voltage
V
S D
V
5
Notes
＜
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300μ s, Duty C ycle 2%.
＜
＜
c.G uaranteed by design, not subject to production testing.
N-C hannel
25
20
15
25
VG S =10,9,8,7,6,5,V
20
25 C
15
10
10
Tj=125 C
VG S =4V
5
5
0
-55 C
4.0 5.0
0
0.0
1.0
2.0
3.0
6.0
0
0.5
1
1.5
2
2.5
3
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
0.030
0.025
3000
VG S =10V
2500
2000
1500
0.020
Tj=125 C
0.015
0.010
0.005
0
25 C
C iss
1000
500
0
C oss
C rss
-55 C
0
5
10
15
20
0
5
10
15
20
25
30
ID, Drain C urrent(A)
VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
Figure 3. C apacitance
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
