S DM8401
S amHop Microelectronics C orp.
Augus t , 2002
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y
(N-C hannel)
V
DS S
30V
P R ODUC T S UMMAR Y
(P -C hannel)
V
DS S
-30V
I
D
6A
R
DS (ON) ( m
W
)
TYP
I
D
-4.5A
R
DS (ON) ( m
W
)
TYP
18.5 @ V
G S
= 10V
25 @ V
G S
= 4.5V
D
1
8
38.5 @ V
G S
= -10V
57.5 @ V
G S
= -4.5V
D
1
7
D
2
6
D
2
5
S O-8
1
1
2
3
4
S
1
G
1
S
2
G
2
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
J
=125 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
N-C hannel P-C hannel
30
20
6.0
18.0
1.7
2.0
-55 to 150
-30
20
4.5
15
-1.7
Unit
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
62.5
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
