S DM8401
=
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unles s otherwis e noted)
Typ C Max
P arameter
C ondition
Min
-30
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
µ A
nA
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
-1
-1.5
38.5
57.5
-3
53
95
V
G ate Threshold Voltage
=
V
V
V
V
V
DS
V
G S , I = -250uA
D
m ohm
=
=
GS -10V, I
GS =-4.5V, I
DS = -5V, VG S = -10V
D
-4.5A
Drain-S ource On-S tate R esistance
R
DS (ON)
m ohm
D
= -3.6A
On-S tate Drain C urrent
I
D(ON)
A
S
-20
5
gFS
10
Forward Transconductance
=
DS -15V, I - 4.5A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
860
457
140
C
IS S
V
DS =-15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
Turn-On Delay Time
t
D(ON)
20
40
ns
ns
9
V
R
D
L
= -15V,
= 15
R ise Time
tr
10
37
23
I
D
= -1A,
G E N = -10V,
G E N = 6
Turn-Off Delay Time
Fall Time
tD(OFF)
ns
ns
90
V
R
tf
110
nC
nC
nC
nC
V
V
DS =-15V,I
DS =-15V,I
D
=-4.9A,VG S =-10V
15
8
20
10
Q
g
Total G ate C harge
D
=-4.9A,VG S =-4.5V
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
3
4
V
V
DS =-15V, I
G S =-10V
D
= - 4.9A,
gd
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
