Datasheet
RGSX5TS65E
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.37
0.57
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
VCE = 650V, VGE= 0V
ICES Tj = 25℃
Collector Cut - off Current
-
-
-
-
10
5
μA
Tj = 175℃*2
mA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 3.5mA
-
-
±200
7.0
nA
V
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 75A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.70
2.20
2.15
-
V
V
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