Daattaasshheeeett
BM2PXX2F
●Absolute Maximum Ratings（Ta=25C）
Parameter
Symbol
Vmax1
Rating
-0.3～30
-0.3～6.5
650
Unit
V
Conditions
Maximum applied voltage 1
Maximum applied voltage 2
Maximum applied voltage 3
VCC
Vmax2
V max3
V
V
SOURCE, FB, BR
DRAIN
PW=10us, Duty cycle=1%
(BM2P052F)
PW=10us, Duty cycle=1%
(BM2P092F)
Drain current pulse
Drain current pulse
IDP
2.60
A
IDP
Pd
1.30
563
A
Allowable dissipation
Operating
temperature range
mW
oC
Topr
-40 ～ +105
MAX junction temperature
TJMAX
Tsar
150
oC
co
Storage
temperature range
-55 ～ +150
(Note1) SOP8 : When mounted (on 70 mm × 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate).
Reduce to4.504 mW/C when Ta = 25C or above.
●Operating Conditions（Ta=25C）
Parameter
Power supply voltage range 1
Power supply voltage range 2
Symbol
VCC
VDRAIN
Rating
8.9～26.0
～650
Unit
V
V
Conditions
VCC pin voltage
DRAIN pin voltage
●Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25C, VCC = 15 V)
Specifications
Parameter
[MOSFET Block]
Symbol
Unit
Conditions
Min
Typ
Max
Between drain and
source voltage
Drain leak current
V(BR)DDS
IDSS
650
-
-
-
V
uA
Ω
ID=1mA / VGS=0V
-
-
100
5.5
VDS=650V / VGS=0V
ID=0.25A / VGS=10V
(BM2P052F)
ID=0.25A / VGS=10V
(BM2P092F)
On resistance
On resistance
RDS(ON)
4.0
RDS(ON)
-
8.5
12.0
Ω
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TSZ02201-0F2F0A200040-1-2
7. Mar.2017.Rev.007
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