7th.July.2000 Ver. 1.1
MITSUBISHI LSIs
M5M5V108DFP,VP,KV -70H
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
(Ta=0~70°C, unless otherwise noted)
Symbol
V
CC (PD)
V
I (S1)
V
I (S2)
Parameter
Power down supply voltage
Chip select input S
1
Chip select input S
2
2.7V≤Vcc(PD)
Vcc(PD)<2.7V
V
CC
= 3V
I
CC (PD)
Power down supply current
1) S
2
≤
0.2V,
other inputs = 0~3V
2) S
1
≥
V
CC
–0.2V,
S
2
≥
V
CC
–0.2V
other inputs = 0~3V
~25°C
-H
~40°C
~70°C
Test conditions
Min
2
2.0
Limits
Typ
Vcc(PD)
Max
Unit
V
0.6
0.2
1
3
10
V
V
V
µA
(2) TIMING REQUIREMENTS
(Ta=0~70°C, unless otherwise noted )
Symbol
t
su (PD)
t
rec (PD)
Parameter
Power down set up time
Power down recovery time
Test conditions
Min
0
5
Limits
Typ
Max
Unit
ns
ms
(3) POWER DOWN CHARACTERISTICS
S
1
control mode
V
CC
t
su (PD)
2.7V
2.7V
t
rec (PD)
2.2V
S
1
S
1
≥
V
CC
- 0.2V
2.2V
Note 9: On the power down mode by controlling S
1
,the input level of S
2
must be S
2
≥
Vcc - 0.2V or
S
2
≤
0.2V. The other pins(Address,I/O,WE,OE) can be in high impedance state.
S
2
control mode
V
CC
2.7V
2.7V
t
rec (PD)
S
2
t
su (PD)
0.2V
S
2
≤
0.2V
0.2V
7
RENESAS [ RENESAS TECHNOLOGY CORP ]
