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HD64F3337YF16 参数 Datasheet PDF下载

HD64F3337YF16图片预览
型号: HD64F3337YF16
PDF下载: 下载PDF文件 查看货源
内容描述: 单片机 [Single-Chip Microcomputer]
分类和应用: 微控制器和处理器外围集成电路
文件页数/大小: 747 页 / 2993 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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tOSC1  
ø
*
2.7 to 5.5 V  
VCC  
0 µs min  
0 µs min  
12 ± 0.6 V  
VCC + 2 V to 11.4 V  
0 µs min  
VPP  
0 to VCCV  
VCCV  
Boot mode  
Timing at which boot  
program branches  
to RAM area  
12 ± 0.6 V  
VPP  
0 to VCC  
V
VCCV  
User program  
mode  
RES  
Min 10ø  
(when RES is low)  
Periods during which the VPP flag is being set or  
cleared and flash memory must not be accessed  
Note: * In the LH version, VCC = 3.0 V to 5.5 V.  
Figure 19.20 VPP Power-On and Power-Off Timing  
(6) Do not apply 12 V to the FVPP pin during normal operation.  
To prevent accidental programming or erasing due to microcontroller program runaway etc., apply  
12 V to the VPP pin only when the flash memory is programmed or erased, or when flash memory  
is emulated by RAM. Overprogramming or overerasing due to program runaway can cause  
memory cells to malfunction. Avoid system configurations in which 12 V is always applied to the  
FVPP pin.  
While 12 V is applied, the watchdog timer should be running and enabled to halt runaway  
program execution, so that program runaway will not lead to overprogramming or overerasing.  
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