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HD64F3337YF16 参数 Datasheet PDF下载

HD64F3337YF16图片预览
型号: HD64F3337YF16
PDF下载: 下载PDF文件 查看货源
内容描述: 单片机 [Single-Chip Microcomputer]
分类和应用: 微控制器和处理器外围集成电路
文件页数/大小: 747 页 / 2993 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Bit 1—Erase Mode (E):*1, *2 Selects transition to or exit from erase mode.  
Bit 1: E  
Description  
0
1
Exit from erase mode  
Transition to erase mode  
(Initial value)  
Bit 0—Program Mode (P):*1, *2 Selects transition to or exit from program mode.  
Bit 0: P  
Description  
0
1
Exit from program mode  
Transition to program mode  
(Initial value)  
Notes: *1 Do not set two or more of these bits simultaneously. Do not release or shut off the VCC  
or VPP power supply when these bits are set.  
*2 Set the P or E bit according to the instructions given in section 19.4, Programming and  
Erasing Flash Memory.  
Set the watchdog timer beforehand to make sure that these bits do not remain set for  
longer than the specified times.  
For notes on use, see section 19.7, Flash Memory Programming and Erasing  
Precautions.  
19.2.2  
Erase Block Register 1 (EBR1)  
EBR1 is an 8-bit register that designates large flash-memory blocks for programming and erasure.  
EBR1 is initialized to H'F0 by a reset, in the standby modes, and when 12 V is not applied to the  
FVPP pin. When a bit in EBR1 is set to 1, the corresponding block is selected and can be  
programmed and erased. Figure 19.2 and table 19.6 show details of a block map.  
Bit  
7
1
6
1
5
1
4
1
3
LB3  
0
2
LB2  
0
1
LB1  
0
0
LB0  
0
Initial value  
Read/Write  
R/W*  
R/W*  
R/W*  
R/W*  
Note: * The initial value is H'F0 in modes 2 and 3 (on-chip ROM enabled). In mode 1 (on-chip ROM  
disabled), this register cannot be modified and always reads H'FF. For information on  
accessing this register, refer to in section 19.7 Flash Memory Programming and erasing  
Precautions (11).  
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