HAT1127H
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
Static Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
200
100
Tc = –25°C
30
75°C
10
3
1
V
DS
= –10 V
Pulse Test
–1
–3
–10
–30
–100
25°C
12
I
D
= –5 A, –10 A, –20 A
8
V
GS
= –4.5 V
4
–10 V
0
–40
0
40
–5 A, –10 A, –20 A
80
120
160
0.2
–0.1 –0.3
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
30000
10000
Reverse Recovery Time trr (ns)
1000
500
Capacitance C (pF)
Ciss
3000
1000
300
100
30
0
Coss
Crss
200
100
50
di/dt = –100 A/µs
V
GS
= 0, Ta = 25°C
–1
–3
–10
–30
–100
20
10
–0.1 –0.3
V
GS
= 0
f = 1 MHz
–10
–20
–30
–40
–50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Switching Characteristics
Drain to Source Voltage V
DS
(V)
–10
–4
Switching Time t (ns)
V
DD
= –5 V
–10 V
–25 V
V
DD
= –25 V
–10 V
–5 V
V
DS
V
GS
Gate to Source Voltage V
GS
(V)
0
0
200
td(off)
100
tf
50
tr
20
10
td(on)
V
GS
= –10 V, V
DS
= –10 V
Rg = 4.7
Ω,
duty
≤
1 %
–2
–5 –10 –20
–50
–20
–8
–30
–12
–40
I
D
= –40 A
–50
0
40
80
120
160
–16
–20
200
5
–0.1 –0.2 –0.5 –1
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.5.00 Jan 20, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
