HAT1127H
Silicon P Channel Power MOS FET
Power Switching
REJ03G1330-0500
Rev.5.00
Jan 20, 2006
Features
•
•
•
•
Capable of –4.5 V gate drive
Low drive current
High density mounting
Ultra Low on-resistance
R
DS(on)
= 3.6 mΩ typ. (at V
GS
= –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to Case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
θch-c
Note2
Tch
Tstg
Ratings
–30
–20/+10
–40
–160
–40
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
Rev.5.00 Jan 20, 2006 page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
