HAT1127H
Main Characteristics
Power vs. Temperature Derating
40
–500
–100
30
10
0
µ
µ
s
1m
s
PW
s
=1
DC
0m
Op
era
s
tio
n
Maximum Safe Operation Area
Pch (W)
Drain Current I
D
(A)
10
Channel Dissipation
–10
20
–1
Operation in this area
is limited by R
DS(on)
10
–0.1
Ta = 25°C
1 shot Pulse
0
50
100
150
200
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
Case Temperature
Tc (°C)
Drain to Source Voltage V
DS
(V)
–10 V
Typical Output Characteristics
–4.5 V
–2.9 V
–3.0 V
Typical Transfer Characteristics
–50
V
DS
= –10 V
Pulse Test
–50
–2.8 V
–2.7 V
Drain Current I
D
(A)
–30
–2.6 V
Drain Current I
D
(A)
–40
–40
–30
Tc = 75°C
–20
–2.5 V
V
GS
= –2.4 V
–20
–10
Pulse Test
–10
25°C
–25°C
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
–5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.20
Pulse Test
–0.16
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
Pulse Test
50
Drain to Source Voltage V
DS(on)
(V)
–0.12
I
D
= –20 A
–10 A
–5 A
0
–4
–8
–12
–16
–20
20
10
5
–10 V
2
1
–0.1 –0.2 –0.5 –1 –2
V
GS
= –4.5 V
–0.08
–0.04
–5 –10 –20 –50 –100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.5.00 Jan 20, 2006 page 3 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
