HAT1069C
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain to Source On State Resistance
R
DS(on)
(mΩ)
120
Pulse Test
–4 A
–1.8 V
–1.5 A
–4 A
–2.5 V
40
20
–25
V
GS
= –4.5 V
0
25
50
75
100 125
150
I
D
= –4 A, –1.5 A, –1 A
–1 A
–1.5 A –1 A
100
Pulse Test
Forward Transfer Admittance vs.
Drain Current
100
10
80
Tc = –25°C
60
75°C
1
25°C
0.1
–0.1
–0.3
–1
V
DS
= –10 V
–3
–10
Case Temperature Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
1000
Coss
100
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= –3 A
V
DD
= –10, –12 V
–7 V
–5 V
–8
–5 V
–7 V
–10 V
V
DD
= –12 V
–4
Crss
10
0
–2
–4
–6
–8
–10
–12
–16
0
10
Gate Charge Qg (nc)
–8
20
Drain to Source Voltage V
DS
(V)
Switching Characteristics
1000
Reverse Drain Current vs.
Source to Drain Voltage
–16
Switching Time t (ns)
td(off)
tf
tr
100
td(on)
Reverse Drain Current I
DR
(A)
V
GS
= –4.5 V, V
DD
= –10 V
Pulse Test
–12
–5 V
–8
V
GS
= 0, 5 V
–4
10
–0.1
Ta = 25°C
0
–0.4
–0.8
–1.2
–1.6
–2.0
–1
–10
–100
Drain Current I
D
(A)
Source to Drain Voltage V
SD
(V)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 4 of 5
Gate to Source Voltage V
GS
(V)
10000
0
0
Capacitance C (pF)
RENESAS [ RENESAS TECHNOLOGY CORP ]
