HAT1069C
Silicon P Channel Power MOS FET
Power Switching
REJ03G0164-0300
Rev.3.00
Oct 19, 2007
Features
•
Low on-resistance
R
DS(on)
= 38 mΩ typ (at V
GS
= –4.5 V)
•
High speed switching
•
Capable of 1.8 V gate drive
•
High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Index band
6
5
2 3 4 5
D D D D
4
6
G
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
2
1
3
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
–12
±8
–4
–16
–4
900
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the grass epoxy board. (FR4 40
×
40
×
1.6 mm)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 1 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
