HAT1069C
Main Characteristics
Power vs. Temperature Derating
1600
–100
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Maximum Safe Operation Area
Ta = 25°C
1 shot Pulse
Channel Dissipation Pch (mW)
100
µs
10
µs
PW
1200
Drain Current I
D
(A)
–10
=
1
10
m
s
D
C
800
–1
m
s
O
ra
pe
tio
n
N
ot
e4
400
–0.1
Operation in
this area is
limited by R
DS(on)
–0.01
–0.1
–1
0
0
50
100
150
200
–10
–100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 4: When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
–16
–10 V
–4.5 V
–3 V
–2.5 V
–16
–2.2 V
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
–12
–2 V
–12
–8
V
GS
= –1.8 V
–8
–4
Pulse Test
0
–2
–4
–6
–8
–10
–4
75°C
25°C
Tc = –25°C
–1
–2
–3
–4
–5
0
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Voltage V
DS(on)
(mV)
Drain to Source On State Resistance
R
DS(on)
(mΩ)
–250
Ta = 25°C
–200
–150
–4.0 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Ta = 25°C
–2.5 V
100
V
GS
= –1.8 V
–100
–1.5 A
–50
–1.0 A
0
–2
–4
–6
–8
–10
–4.5 V
10
1
–0.1
–1
–10
Gate to Source Voltage
V
GS
(V)
Drain Current I
D
(A)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 3 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
