HAT1069C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
Min
–12
±8
—
—
–0.3
—
—
—
5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
38
48
60
8
1380
235
115
16
3
6.2
35
150
490
350
–0.8
Max
—
—
±10
–1
–1.2
52
70
93
—
—
—
—
—
—
—
—
—
—
—
–1.1
Unit
V
V
µA
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100
µA,
V
DS
= 0
V
GS
= ±6.4 V, V
DS
= 0
V
DS
= –12 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –1.5 A, V
GS
= –4.5 V
I
D
= –1.5 A, V
GS
= –2.5 V
I
D
= –1.5 A, V
GS
= –1.8 V
I
D
= –1.5 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
DS
= –10 V
V
GS
= –4.5 V
I
D
= –3 A
V
GS
= –4 V, I
D
= –1.5 A
V
DD
≅
–10 V
R
L
= 6.6
Ω
R
g
= 4.7
Ω
I
F
= –4 A, V
GS
= 0
Note3
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 2 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
