MITSUBISHI POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
2.0
7
5
3
2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
1.6
V
DS
= 10V
I
D
= 1mA
1.2
10
0
7
5
3
2
V
GS
= 4V
I
D
= 7A
Pulse Test
0.8
0.4
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch-a)
(°C/W)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
1.2
10
1
7
5
3
2
P
DM
tw
1.0
V
GS
= 0V
I
D
= 1mA
0.8
10
0
7
5
3
2
Single Pulse
T
D
=
tw
T
0.6
0.4
–50
0
50
100
150
10
–1 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 57
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (°C)
Aug. 1999
RENESAS [ RENESAS TECHNOLOGY CORP ]
