MITSUBISHI POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
MAXIMUM SAFE OPERATING AREA
7
5
tw = 10µs
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
1.6
3
2
100µs
1ms
10
1
7
5
3
2
1.2
0.8
10
0
7
5
3
2
T
C
= 25°C
Single Pulse
10ms
0.4
100ms
0
10
–1
0
50
100
150
200
7
2
3
5 7
10
0
2
3
5 7
10
1
DC
2
3
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
V
GS
= 4V
P
D
= 1.6W
3V
2.5V
OUTPUT CHARACTERISTICS
(TYPICAL)
20
V
GS
= 4V,3V,2.5V
2V
Tc = 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
40
16
30
2V
Tc = 25°C
Pulse Test
12
1.5V
20
8
10
1.5V
4
P
D
= 1.6W
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
40
Tc = 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
V
GS
= 2.5V
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
1.6
32
1.2
24
4V
0.8
I
D
= 14A
7A
3A
16
Tc = 25°C
Pulse Test
0.4
8
0
0
1.0
2.0
3.0
4.0
5.0
0
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
DRAIN CURRENT I
D
(A)
Aug. 1999
GATE-SOURCE VOLTAGE V
GS
(V)
RENESAS [ RENESAS TECHNOLOGY CORP ]
