MITSUBISHI POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state voltage
I
D
= 1mA, V
GS
= 0V
V
GS
=
±10V,
V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
Test conditions
Limits
Min.
20
—
—
0.5
—
—
—
—
—
—
—
—
V
DD
= 10V, I
D
= 3.5A, V
GS
= 4V, R
GEN
= R
GS
= 50Ω
—
—
—
—
—
—
Typ.
—
—
—
0.8
17
21
0.119
20
1350
400
300
30
80
150
160
0.75
—
50
Max.
—
±0.1
0.1
1.3
21
30
0.147
—
—
—
—
—
—
—
—
1.10
78.1
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
I
D
= 7A, V
GS
= 4V
Drain-source on-state resistance I
D
= 3.5A, V
GS
= 2.5V
Drain-source on-state voltage I
D
= 7A, V
GS
= 4V
I
D
= 7A, V
DS
= 10V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DS
= 10V, V
GS
= 0V, f = 1MHz
I
S
= 1.5A, V
GS
= 0V
Channel to ambiet
I
S
= 1.5A, d
is
/d
t
= –50A/µs
Aug. 1999
RENESAS [ RENESAS TECHNOLOGY CORP ]
