MITSUBISHI POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7
5
T
C
= 25°C,75°C,125°C
TRANSFER CHARACTERISTICS
(TYPICAL)
50
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
40
3
2
30
Tc = 25°C
V
DS
= 10V
Pulse Test
10
1
7
5
3
2
V
DS
=10V
Pulse Test
20
10
0
0
1.0
2.0
3.0
4.0
5.0
10
0 0
10
2
3
5 7
10
1
2
3
5 7
10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2
Ciss
3
2
SWITCHING CHARACTERISTICS
(TYPICAL)
t
f
t
d(off)
t
r
t
d(on)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
10
3
7
5
3
2
Tch = 25°C
V
GS
= 0V
f = 1MH
Z
Coss
Crss
10
2
7
5
3
2
10
1
7
5
3
2
Tch = 25°C
V
GS
= 4V
V
DD
= 10V
R
GEN
= R
GS
= 50Ω
10
2
7
5
3
2
10
–1
2 3
5 7
10
0
2 3
5 7
10
1
2
10
0
10
–1
2
3
5 7
10
0
2
3
5 7
10
1
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
5.0
20
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE CURRENT I
S
(A)
4.0
V
DS
=
7V
10V
16
T
C
=
25°C
75°C
3.0
15V
12
125°C
2.0
8
V
GS
= 0V
T
C
= 25°C
Pulse Test
1.0
I
D
=7A
Tch = 25°C
4
0
0
8
16
24
32
40
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
Aug. 1999
RENESAS [ RENESAS TECHNOLOGY CORP ]
