2SK3155
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
1000
0.5
0.4
0.3
0.2
0.1
Pulse Test
300
100
Tc = –25°C
5 A
25°C
ID = 10 A
30
1
75°C
VGS = 4 V
10 A 5 A
0.3
0.1
VDS = 10 V
Pulse Test
10 V
0
10
50 100
5
20
2
0.1
0.5
1
0.2
–40
0
40
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
500
10000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
3000
1000
200
100
50
Ciss
300
100
Coss
Crss
20
30
10
10
5
VGS = 0
f = 1 MHz
0.1 0.2
0.5
1
2
5
10 20
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 15 A
Switching Characteristics
1000
500
200
160
120
80
20
16
12
8
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
VGS
t
VDD = 100 V
50 V
25 V
d(off)
200
100
50
t
f
VDS
t
r
20
10
5
t
d(on)
VDD = 100 V
50 V
25 V
40
4
0
0
20
2
5
0.5
1
10
20
40
60
80
100
0.1 0.2
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.5.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
