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2SK3155 参数 Datasheet PDF下载

2SK3155图片预览
型号: 2SK3155
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关局域网
文件页数/大小: 8 页 / 88 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK3155的Datasheet PDF文件第1页浏览型号2SK3155的Datasheet PDF文件第2页浏览型号2SK3155的Datasheet PDF文件第4页浏览型号2SK3155的Datasheet PDF文件第5页浏览型号2SK3155的Datasheet PDF文件第6页浏览型号2SK3155的Datasheet PDF文件第7页浏览型号2SK3155的Datasheet PDF文件第8页  
2SK3155  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
500  
40  
30  
20  
10  
200  
100  
50  
20  
10  
5
2
1
Operation in  
this area is  
0.5  
0.2  
0.1  
limited by R  
DS(on)  
Ta = 25°C  
0.05  
1000  
100 300  
0
10 30  
0.1  
1
3
50  
100  
150  
200  
0.3  
Case Temperature TC (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
20  
16  
12  
8
20  
16  
12  
8
5 V  
4 V  
10 V  
VDS = 10 V  
Pulse Test  
Pulse Test  
3.5 V  
3 V  
75°C  
25°C  
4
4
Tc = –25°C  
VGS = 2.5 V  
0
0
1
2
3
4
5
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
1.0  
0.5  
5
4
3
2
1
Pulse Test  
Pulse Test  
0.2  
0.1  
VGS = 4 V  
10 V  
ID = 15 A  
0.05  
10 A  
5 A  
0.02  
0.01  
12  
0
4
8
16  
20  
1
3
10  
30 100  
0.1 0.3  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.5.00 Sep 07, 2005 page 3 of 7