2SK3155
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
150
V
V
±20
15
A
Note1
Drain peak current
ID(pulse)
60
A
Body-drain diode reverse drain current
Avalanche current
IDR
15
A
Note3
IAP
15
16
A
Note3
Avalanche energy
EAR
Pch Note2
mJ
W
°C
°C
Channel dissipation
30
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
150
±20
—
Typ
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
—
—
V
V
ID = 10 mA, VGS = 0
—
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 VNote4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
—
±10
10
2.5
0.13
0.15
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
0.10
0.12
14
Ω
—
Ω
Forward transfer admittance
Input capacitance
8.5
—
S
Ciss
Coss
Crss
td(on)
tr
850
300
160
13
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 8 A, VGS = 10 V,
RL = 3.75 Ω
—
100
195
110
0.9
140
—
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body–drain diode forward voltage
VDF
—
—
IF = 15 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
—
ns
IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
