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2SK3155 参数 Datasheet PDF下载

2SK3155图片预览
型号: 2SK3155
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关局域网
文件页数/大小: 8 页 / 88 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK3155的Datasheet PDF文件第1页浏览型号2SK3155的Datasheet PDF文件第3页浏览型号2SK3155的Datasheet PDF文件第4页浏览型号2SK3155的Datasheet PDF文件第5页浏览型号2SK3155的Datasheet PDF文件第6页浏览型号2SK3155的Datasheet PDF文件第7页浏览型号2SK3155的Datasheet PDF文件第8页  
2SK3155  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
150  
V
V
±20  
15  
A
Note1  
Drain peak current  
ID(pulse)  
60  
A
Body-drain diode reverse drain current  
Avalanche current  
IDR  
15  
A
Note3  
IAP  
15  
16  
A
Note3  
Avalanche energy  
EAR  
Pch Note2  
mJ  
W
°C  
°C  
Channel dissipation  
30  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg 50 Ω  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
150  
±20  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown voltage  
Gate to source breakdown voltage  
Gate to source leak current  
Zero gate voltage drain current  
Gate to source cutoff voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
V
V
ID = 10 mA, VGS = 0  
IG = ±100 µA, VDS = 0  
VGS = ±16 V, VDS = 0  
VDS = 150 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 8 A, VGS = 10 VNote4  
ID = 8 A, VGS = 4 V Note4  
ID = 8 A, VDS = 10 V Note4  
±10  
10  
2.5  
0.13  
0.15  
µA  
µA  
V
IDSS  
VGS(off)  
RDS(on)  
RDS(on)  
|yfs|  
1.0  
Static drain to source on state  
resistance  
0.10  
0.12  
14  
Forward transfer admittance  
Input capacitance  
8.5  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
850  
300  
160  
13  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
ID = 8 A, VGS = 10 V,  
RL = 3.75 Ω  
100  
195  
110  
0.9  
140  
Turn-off delay time  
Fall time  
td(off)  
tf  
Body–drain diode forward voltage  
VDF  
IF = 15 A, VGS = 0  
Body–drain diode reverse recovery  
time  
trr  
ns  
IF = 15 A, VGS = 0  
diF/ dt = 50 A/ µs  
Note: 4. Pulse test  
Rev.5.00 Sep 07, 2005 page 2 of 7