2SJ319(L), 2SJ319(S)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
3
2
5
4
3
2
1
Tc = –25°C
1
–2 A
ID = –5 A
25°C
75°C
0.5
–1 A
0.2
0.1
VGS = –10 V
Pulse Test
VDS = –10 V
Pulse Test
0
–40
0
40
80
120
160
–0.05 –0.1 –0.2 –0.5 –1 –2
–5 –10
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
1000
500
Ciss
200
100
50
200
100
50
Coss
20
10
5
20
10
5
Crss
di / dt = 50 A / µs, VGS = 0
duty ≤ 1 %, Ta = 25°C
VGS = 0
f = 1 MHz
–0.05 –0.1 –0.2
–0.5 –1
–2
–5
0
–10
–20
–30
–40
–50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
0
–100
–200
–300
–400
–500
500
0
VDD = –50 V
–100 V
–150 V
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
200
100
–4
–8
VDS
VDD = –150 V
–100 V
–50 V
t
d(off)
50
t
f
–12
–16
–20
VGS
20
10
t
r
t
d(on)
5
–0.05 –0.1 –0.2 –0.5 –1 –2
0
4
8
12
16
20
–5 –10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
