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2SJ319 参数 Datasheet PDF下载

2SJ319图片预览
型号: 2SJ319
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P沟道MOS场效应晶体管 [Silicon P Channel MOS FET]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 8 页 / 87 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SJ319的Datasheet PDF文件第1页浏览型号2SJ319的Datasheet PDF文件第2页浏览型号2SJ319的Datasheet PDF文件第4页浏览型号2SJ319的Datasheet PDF文件第5页浏览型号2SJ319的Datasheet PDF文件第6页浏览型号2SJ319的Datasheet PDF文件第7页浏览型号2SJ319的Datasheet PDF文件第8页  
2SJ319(L), 2SJ319(S)  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
–50  
–30  
20  
15  
10  
05  
0
–10  
–3  
–1  
Operation in  
this area is  
limited by RDS (on)  
–0.3  
–0.1  
Ta = 25°C  
–0.05  
0
50  
100  
150  
200  
–1  
–3  
–10 –30  
–100 –300500  
Case Temperature Tc (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
–5  
–4  
–3  
–2  
–1  
0
–5  
–4  
–3  
–2  
–1  
0
–10 V  
–8 V  
–6 V  
Tc = –25°C  
25°C  
Pulse Test  
75°C  
–5 V  
–4 V  
VDS = –10 V  
Pulse Test  
VGS = –3.5 V  
0
–4  
–8  
–12  
–16  
–20  
0
–2  
–4  
–6  
–8  
–10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
–20  
10  
Pulse Test  
VGS = –10 V  
Pulse Test  
5
–16  
–12  
–8  
2
1
ID = –5 A  
0.5  
–2 A  
–1 A  
–4  
0.2  
0.1  
0
0
–4  
–8  
–12  
–16  
–20  
–0.2  
–0.5  
–1  
–2  
–5  
–10  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 3 of 7