2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
–200
±20
Unit
V
V
–3
A
Note 1
Drain peak current
ID (pulse)
–12
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
Tch
–3
A
20
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IGSS
Min
–200
±20
—
Typ
—
Max
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
—
—
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –160 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –2 A, VGS = –10 V Note 3
ID = –2 A, VDS = –10 V Note 3
VDS = –10 V
—
V
—
±10
–100
–4.0
2.3
—
µA
µA
V
IDSS
—
—
VGS (off)
RDS (on)
|yfs|
–2.0
—
—
1.7
1.7
330
130
25
Ω
1.0
—
S
Ciss
Coss
Crss
td (on)
tr
—
pF
pF
pF
ns
ns
ns
ns
V
VGS = 0
Output capacitance
—
—
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
—
—
—
10
—
ID = –2 A
V
GS = –10 V
Rise time
—
30
—
RL = 15 Ω
Turn-off delay time
td (off)
tf
—
40
—
Fall time
—
30
—
Body to drain diode forward voltage
Body to drain diode reverse recovery time
VDF
—
–1.15
180
—
IF = –3 A, VGS = 0
IF = –3 A, VGS = 0
diF/dt = 50 A/µs
trr
—
—
ns
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
