The documentation and process conversion measures
necessary to comply with this document shall be
completed by 16 June 2007.
INCH-POUND
MIL-PRF-19500/355M
16 March 2007
SUPERSEDING
MIL-PRF-19500/355L
2 June 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), figure 4 (JANHCB and JANKCB die).
*
1.3 Maximum ratings. Unless otherwise specified, T
C
=+25°C.
Type
I
C
mA dc
All types
30
V
CBO
V dc
70
V
CEO
V dc
60
V
EBO
V dc
6
P
T
(1)
T
A
= +25°C
One
section
mW
200
Both
sections
mW
350
P
T
(2)
T
C
= +25°C
One
section
mW
300
Both
sections
mW
450
One
section
°C/W
875
R
θJA
Both
sections
°C/W
500
One
section
°C/W
583
R
θJC
Both
sections
°C/W
350
T
J
and T
STG
°C
-65 to +200
(1) For T
A
> +25°C, derate linearly 1.143 mW/°C, one section; 2.000 mW/°C, both sections.
(2) For T
C
> +25°C, derate linearly 1.714 mW/°C, one section; 2.571 mW/°C, both sections.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Since contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
.
AMSC N/A
FSC 5961
RAYTHEON [ RAYTHEON COMPANY ]
