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SS2625Q1-10 参数 Datasheet PDF下载

SS2625Q1-10图片预览
型号: SS2625Q1-10
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 2MX36, 5ns, CMOS, PQFP100, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 30 页 / 223 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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72Mbit Pipelined BSRAM  
w/ NoBL Architecture  
2Mx36  
Preliminary Data Sheet  
Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the  
Boundary Scan register between the TDI and TDO pins.  
Note that since the PRELOAD part of this instruction is not implemented, putting the TAP into the Update to the  
Update-DR state while performing a SAMPLE/PRELOAD instruction has the same effect as the Pause-DR instruction.  
BYPASS  
When the BYPASS instruction is loaded in the Instruction register and the TAP is placed in a Shift-DR state, the  
Bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens  
the boundary scan path when multiple devices are connected together on a board.  
RESERVED  
These instructions are not implemented but are reserved for future use. Do not use these instructions.  
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
Copyright 2001 Enhanced Memory Systems. All rights reserved.  
The information contained herein is subject to change without notice.  
Revision 1.0  
Page 19 of 30  
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