FM28V020 - 32Kx8 F-RAM
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
V
DD
Power Supply Voltage with respect to V
SS
V
IN
Voltage on any signal pin with respect to V
SS
T
STG
T
LEAD
V
ESD
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
- Human Body Model
(AEC-Q100-002 Rev. E)
- Charged Device Model
(AEC-Q100-011 Rev. B)
- Machine Model
(AEC-Q100-003 Rev. E
)
Package Moisture Sensitivity Level
Ratings
-1.0V to +4.5V
-1.0V to +4.5V and
V
IN
< V
DD
+1V
-55C to +125C
260 C
2kV
1.25kV
200V
MSL-2 (SOIC)
MSL-3 (TSOP)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions
(T
A
= -40 C to +85 C, V
DD
= 2.0V to 3.6V unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units Notes
V
DD
Power Supply
2.0
3.3
3.6
V
I
DD
V
DD
Supply Current
7
12
mA
1
I
SB
Standby Current – CMOS
90
150
2
A
I
LI
Input Leakage Current
3
1
A
I
LO
Output Leakage Current
3
1
A
V
IH
Input High Voltage
0.7 V
DD
V
DD
+ 0.3
V
V
IL
Input Low Voltage
-0.3
0.3 V
DD
V
V
OH1
Output High Voltage (
I
OH
= -1 mA, V
DD
=2.7V)
2.4
V
V
OH2
Output High Voltage (
I
OH
= -100
A)
V
DD
-0.2
V
V
OL1
Output Low Voltage (
I
OL
= 1 mA, V
DD
=2.7V)
0.4
V
V
OL2
Output Low Voltage (
I
OL
= 150
A)
0.2
V
Notes
1.
V
DD
= 3.6V, /CE cycling at minimum cycle time. All inputs at CMOS levels (0.2V or V
DD
-0.2V), all DQ pins unloaded.
2.
V
DD
= 3.6V, /CE at V
DD
, All other pins at CMOS levels (0.2V or V
DD
-0.2V).
3.
V
IN
, V
OUT
between V
DD
and V
SS
.
Rev. 2.1
June 2011
Page 7 of 14
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
