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FM28V020_11 参数 Datasheet PDF下载

FM28V020_11图片预览
型号: FM28V020_11
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kbit字节宽度的F- RAM存储器 [256Kbit Bytewide F-RAM Memory]
分类和应用: 存储
文件页数/大小: 14 页 / 248 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM28V020 - 32Kx8 F-RAM
Read Cycle AC Parameters
(T
A
= -40 C to +85 C, C
L
= 30 pF, V
DD
= 2.0V to 3.6V unless otherwise specified)
Symbol Parameter
Min
Max
Units Notes
t
RC
Read Cycle Time
140
-
ns
t
CE
Chip Enable Access Time
-
70
ns
t
AA
Address Access Time
-
140
ns
t
OH
Output Hold Time
20
-
ns
t
AAP
Page Mode Address Access Time
-
60
ns
t
OHP
Page Mode Output Hold Time
3
-
ns
t
CA
Chip Enable Active Time
70
-
ns
t
PC
Precharge Time
70
-
ns
t
AS
Address Setup Time (to /CE low)
0
-
ns
t
AH
Address Hold Time (/CE-controlled)
70
-
ns
t
OE
Output Enable Access Time
-
15
ns
t
HZ
Chip Enable to Output High-Z
-
10
ns
1
t
OHZ
Output Enable High to Output High-Z
-
10
ns
1
Write Cycle AC Parameters
(T
A
= -40 C to +85 C, V
DD
= 2.0V to 3.6V unless otherwise specified)
Symbol Parameter
Min
Max
Units
t
WC
Write Cycle Time
140
-
ns
t
CA
Chip Enable Active Time
70
-
ns
t
CW
Chip Enable to Write Enable High
70
-
ns
t
PC
Precharge Time
70
-
ns
t
PWC
Page Mode Write Enable Cycle Time
30
-
ns
t
WP
Write Enable Pulse Width
18
-
ns
t
AS
Address Setup Time (to /CE low)
0
-
ns
t
AH
Address Hold Time (/CE-controlled)
70
-
ns
t
ASP
Page Mode Address Setup Time
(to /WE low)
5
-
ns
t
AHP
Page Mode Address Hold Time
(to /WE low)
15
-
ns
t
WLC
Write Enable Low to /CE High
25
-
ns
t
WLA
Write Enable Low to A(14:3) Change
25
-
ns
t
AWH
A(14:3) Change to Write Enable High
140
-
ns
t
DS
Data Input Setup Time
15
-
ns
t
DH
Data Input Hold Time
0
-
ns
t
WZ
Write Enable Low to Output High Z
-
10
ns
t
WX
Write Enable High to Output Driven
5
-
ns
t
WS
Write Enable to /CE Low Setup Time
0
-
ns
t
WH
Write Enable to /CE High Hold Time
0
-
ns
Notes
1
This parameter is characterized but not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs.
Notes
1
1
1,2
1,2
Power Cycle Timing
(T
A
= -40 C to +85 C, V
DD
= 2.0V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
t
VR
V
DD
Rise Time
50
-
t
VF
V
DD
Fall Time
100
-
t
PU
Power Up (V
DD
min) to First Access Time
250
-
t
PD
Last Access to Power Down (V
DD
min)
0
-
Notes
1
Slope measured at any point on V
DD
waveform.
Units
s/V
s/V
s
s
Notes
1
1
Rev. 2.1
June 2011
Page 8 of 14