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FM24CL16B-G 参数 Datasheet PDF下载

FM24CL16B-G图片预览
型号: FM24CL16B-G
PDF下载: 下载PDF文件 查看货源
内容描述: 16Kb的串行3V F-RAM存储器 [16Kb Serial 3V F-RAM Memory]
分类和应用: 存储
文件页数/大小: 13 页 / 282 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24CL16B - 16Kb 3V I2C F-RAM
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
V
DD
Power Supply Voltage with respect to V
SS
V
IN
Voltage on any pin with respect to V
SS
T
STG
T
LEAD
V
ESD
Storage Temperature
Lead temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
- Human Body Model
(AEC-Q100-002 Rev. E)
- Charged Device Model
(AEC-Q100-011 Rev. B)
- Machine Model
(AEC-Q100-003 Rev. E)
Package Moisture Sensitivity Level
Ratings
-1.0V to +5.0V
-1.0V to +5.0V
and V
IN
< V
DD
+1.0V *
-55°C to + 125°C
260° C
4kV
1.25kV
300V
MSL-1
* Exception: The “V
IN
< V
DD
+1.0V” restriction does not apply to the SCL and SDA inputs.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions
(T
A
= -40° C to + 85° C, V
DD
=2.7V to 3.65V unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
V
DD
Main Power Supply
2.7
3.3
3.65
V
I
DD
VDD Supply Current
100
@ SCL = 100 kHz
µA
170
@ SCL = 400 kHz
µA
300
@ SCL = 1 MHz
µA
I
SB
Standby Current
3
6
µA
I
LI
Input Leakage Current
±1
µA
I
LO
Output Leakage Current
±1
µA
V
IH
Input High Voltage
0.7 V
DD
V
DD
+ 0.3
V
V
IL
Input Low Voltage
-0.3
0.3 V
DD
V
V
OL
Output Low Voltage
@ I
OL
= 3.0 mA
0.4
V
R
IN
WP Input Resistance (WP)
For V
IN
= V
IL
(max)
40
KΩ
For V
IN
= V
IH
(min)
1
MΩ
V
HYS
Input Hysteresis
(Does not apply to WP)
0.05 V
DD
V
Notes
1
2
3
3
5
4
Notes
1. SCL toggling between V
DD
-0.3V and V
SS
, other inputs V
SS
or V
DD
-0.3V.
2. SCL = SDA = V
DD
. All inputs V
SS
or V
DD
. Stop command issued.
3. V
IN
or V
OUT
= V
SS
to V
DD
. Does not apply to the WP pin.
4. This parameter is characterized but not tested.
5. The input pull-down circuit is strong (40KΩ) when the input voltage is below V
IL
and much weaker (1MΩ)
when the input voltage is above V
IH
.
Rev. 1.4
Feb. 2011
Page 8 of 13