Internet Data Sheet
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B
Small Outline DDR2 SDRAM Modules
3.2
DC Operating Conditions
TABLE 10
Operating Conditions
Parameter
Symbol
Values
Min.
Unit
Note
Max.
Operating temperature (ambient)
DRAM Case Temperature
TOPR
TCASE
TSTG
0
+65
+95
+100
+105
90
°C
°C
°C
kPa
%
1)2)3)4)
5)
0
Storage Temperature
– 50
+69
10
Barometric Pressure (operating & storage)
Operating Humidity (relative)
PBar
HOPR
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%.
5) Up to 3000 m.
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Parameter
Symbol
Values
Min.
Unit
Note
Typ.
Max.
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
VDD
1.7
1.8
1.9
V
1)
2)
VDDQ
VREF
1.7
1.8
1.9
V
0.49 × VDDQ
0.5 × VDDQ
0.51 × VDDQ
V
VDDSPD
VIH(DC)
VIL (DC
IL
1.7
—
—
—
—
3.6
V
DC Input Logic High
VREF + 0.125
V
V
5
DDQ + 0.3
V
DC Input Logic Low
)
– 0.30
– 5
REF – 0.125
V
3)
In / Output Leakage Current
µA
1) Under all conditions, VDDQ must be less than or equal to VDD
2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ
3) Input voltage for any connector pin under test of 0 V ≤ VIN ≤ VDDQ + 0.3 V; all other pins at 0 V. Current is per pin
.
Rev. 1.0, 2006-11
13
11172006-DXYK-2PPW
QIMONDA [ QIMONDA AG ]
