Internet Data Sheet
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B
Small Outline DDR2 SDRAM Modules
3.3
Timing Characteristics
3.3.1
Speed Grade Definitions
All Speed grades faster than DDR2-400B comply with DDR2-400B timing specifications(tCK = 5ns with tRAS = 40ns).
Speed Grade Definition: Table 12 for DDR2–800, Table 13 for DDR2–667D and Table 14 for DDR2–533C
TABLE 12
Speed Grade Definition Speed Bins for DDR2–800
Speed Grade
DDR2–800D
DDR2–800E
Unit
Note
QAG Sort Name
CAS-RCD-RP latencies
–2.5F
–2.5
5–5–5
6–6–6
tCK
Parameter
Symbol
Min.
Max.
Min.
Max.
—
1)2)3)4)
1)2)3)4)
1)2)3)4)
1)2)3)4)
1)2)3)4)5)
1)2)3)4)
1)2)3)4)
1)2)3)4)
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
@ CL = 6
tCK
5
8
5
8
ns
ns
ns
ns
ns
ns
ns
ns
tCK
3.75
2.5
8
3.75
3
8
tCK
8
8
tCK
2.5
8
2.5
45
60
15
15
8
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
tRAS
tRC
tRCD
tRP
45
70000
—
70000
—
57.5
12.5
12.5
—
—
—
—
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI
t
.
Rev. 1.0, 2006-11
14
11172006-DXYK-2PPW