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HYS64D32300HU-6-C 参数 Datasheet PDF下载

HYS64D32300HU-6-C图片预览
型号: HYS64D32300HU-6-C
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM Module, 32MX64, 0.7ns, CMOS, GREEN, UDIMM-184]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 37 页 / 1533 K
品牌: QIMONDA [ QIMONDA AG ]
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HYS[64/72]D[16/32/64][300/301/320][G/H]U–[5/6]–C  
Unbuffered DDR SDRAM Modules  
Electrical Characteristics  
3.2  
Current Conditions and Specification  
Table 10  
IDD Conditions  
Parameter  
Symbol  
Operating Current 0  
IDD0  
one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;  
address and control inputs changing once every two clock cycles.  
Operating Current 1  
IDD1  
one bank; active/read/precharge; Burst Length = 4; see component data sheet.  
Precharge Power-Down Standby Current  
all banks idle; power-down mode; CKE VIL,MAX  
IDD2P  
IDD2F  
Precharge Floating Standby Current  
CS VIH,,MIN, all banks idle; CKE VIH,MIN  
;
address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS and DM.  
Precharge Quiet Standby Current  
IDD2Q  
CS VIHMIN, all banks idle; CKE VIH,MIN; VIN = VREF for DQ, DQS and DM;  
address and other control inputs stable at VIH,MIN or VIL,MAX  
.
Active Power-Down Standby Current  
one bank active; power-down mode; CKE VILMAX; VIN = VREF for DQ, DQS and DM.  
IDD3P  
IDD3N  
Active Standby Current  
one bank active; CS VIH,MIN; CKE VIH,MIN; tRC = tRAS,MAX  
DQ, DM and DQS inputs changing twice per clock cycle;  
address and control inputs changing once per clock cycle.  
;
Operating Current Read  
IDD4R  
one bank active; Burst Length = 2; reads; continuous burst;  
address and control inputs changing once per clock cycle;  
50 % of data outputs changing on every clock edge;  
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; IOUT = 0 mA  
Operating Current Write  
IDD4W  
one bank active; Burst Length = 2; writes; continuous burst;  
address and control inputs changing once per clock cycle;  
50 % of data outputs changing on every clock edge;  
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B  
Auto-Refresh Current  
IDD5  
IDD6  
IDD7  
t
RC = tRFCMIN, burst refresh  
Self-Refresh Current  
CKE 0.2 V; external clock on  
Operating Current 7  
four bank interleaving with Burst Length = 4; see component data sheet.  
Internet Data Sheet  
12  
Rev. 1.11, 2007 - 01  
09152006-1LHY-N6G4  
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