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HYI25DC512160CE-5 参数 Datasheet PDF下载

HYI25DC512160CE-5图片预览
型号: HYI25DC512160CE-5
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 动态存储器
文件页数/大小: 30 页 / 1716 K
品牌: QIMONDA [ QIMONDA AG ]
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Preliminary Internet Data Sheet  
HYI25DC512[16/80]0CE  
512-Mbit Double-Data-Rate SDRAM  
4
Electrical Characteristics  
This chapter describes the electrical characteristics.  
4.1  
Operating Conditions  
This chapter contains the operating conditions tables.  
TABLE 15  
Absolute Maximum Ratings  
Parameter  
Symbol  
Values  
Unit Note/ Test  
Condition  
Min.  
Typ. Max.  
Voltage on I/O pins relative to VSS  
Voltage on inputs relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Operating temperature (ambient)  
Storage temperature (plastic)  
VIN, VOUT  
VIN  
–0.5  
–1  
1
V
DDQ + 0.5  
V
+3.6  
+3.6  
+3.6  
+85  
+150  
V
VDD  
–1  
V
VDDQ  
TA  
–1  
V
–40  
–55  
°C  
°C  
W
mA  
TSTG  
PD  
Power dissipation (per SDRAM component)  
Short circuit output current  
IOUT  
50  
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings  
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated  
circuit.  
TABLE 16  
Input and Output Capacitances  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note/  
Test Condition  
Min.  
Max.  
1)  
Input Capacitance: CK, CK  
CI1  
CdI1  
CI2  
2.0  
3.0  
0.25  
3.0  
0.5  
5.0  
0.5  
pF  
pF  
pF  
pF  
pF  
pF  
1)  
Delta Input Capacitance  
1)  
Input Capacitance: All other input-only pins  
2.0  
1)  
Delta Input Capacitance: All other input-only pins CdIO  
1)2)  
1)  
Input/Output Capacitance: DQ, DQS, DM  
CIO  
4.0  
Delta Input/Output Capacitance: DQ, DQS, DM  
CdIO  
1) These values are guaranteed by design and are tested on a sample base only. VDDQ = VDD = 2.5 V ± 0.2 V, f = 100 MHz, TA = 25 °C,  
OUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.  
V
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at the  
board level.  
Rev. 0.7, 2006-12  
18  
11292006-TAIE-H645  
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