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HYI18T1G800C2C-3.7 参数 Datasheet PDF下载

HYI18T1G800C2C-3.7图片预览
型号: HYI18T1G800C2C-3.7
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, PLASTIC, TFBGA-60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 70 页 / 3976 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T1G[40/80/16]0C2[C/F](L)  
1-Gbit Double-Data-Rate-Two SDRAM  
Parameter  
Symbol Note  
1)2)3)4)5)6)  
Self-Refresh Current  
IDD6  
CKE 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are floating, Data  
bus inputs are floating.  
1)2)3)4)5)6)  
Operating Bank Interleave Read Current  
IDD7  
1. All banks interleaving reads, IOUT = 0 mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD) -1 × tCK(IDD); tCK  
=
t
CK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD); tFAW = tFAW(IDD); CKE is HIGH, CS is HIGH between valid  
commands. Address bus inputs are stable during deselects; Data bus is switching.  
2. Timing pattern: see Detailed IDD7 timings shown below.  
1)  
2)  
3)  
VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V.  
I
I
DD specifications are tested after the device is properly initialized.  
DD parameter are specified with ODT disabled.  
4) Data Bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS and UDQS.  
5) Definitions for IDD , see Table 34.  
6) Timing parameter minimum and maximum values for IDD current measurements are defined in Chapter 7.  
Detailed IDD7  
The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the  
specification. Legend: A = Active; RA = Read with Autoprecharge; D = Deselect.  
IDD7 : Operating Current: All Bank Interleave Read operation  
All banks are being interleaved at minimum tRC.IDD without violating tRRD.IDD and tFAW.IDD using a burst length of 4. Control and  
address bus inputs are STABLE during DESELECTs. IOUT = 0 mA.  
Timing Patterns for devices with 1KB page size  
DDR2-533: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D  
DDR2-667: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D  
DDR2-800: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D  
DDR2-1066: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D  
D D D  
Timing Patterns for devices with 2KB page size  
DDR2-533: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D  
DDR2-667: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D  
DDR2-800: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D  
DDR2-1066: A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D A4 RA4 D D D D A5 RA5 D D D D A6  
RA6D D D D A7 RA7 D D D D  
TABLE 34  
Definition for IDD  
Parameter  
Description  
LOW  
Defined as VIN VIL.AC.MAX  
HIGH  
Defined as VIN VIH.AC.MIN  
STABLE  
FLOATING  
SWITCHING  
Defined as inputs are stable at a HIGH or LOW level  
Defined as inputs are VREF = VDDQ / 2  
Defined as: Inputs are changing between high and low every other clock (once per two clocks) for address  
and control signals, and inputs changing between high and low every other clock (once per clock) for DQ  
signals not including mask or strobes  
Rev. 1.60, 2008-08  
38  
09262007-3YK7-BKKG  
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