欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYE18M1G16的Datasheet PDF文件第13页浏览型号HYE18M1G16的Datasheet PDF文件第14页浏览型号HYE18M1G16的Datasheet PDF文件第15页浏览型号HYE18M1G16的Datasheet PDF文件第16页浏览型号HYE18M1G16的Datasheet PDF文件第18页浏览型号HYE18M1G16的Datasheet PDF文件第19页浏览型号HYE18M1G16的Datasheet PDF文件第20页浏览型号HYE18M1G16的Datasheet PDF文件第21页  
Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
2.4  
Commands  
TABLE 6  
Command Overview  
Command  
CS RAS CAS WE  
Address Note  
1)2)  
1)2)  
1)3)  
NOP  
DESELECT  
NO OPERATION  
H
L
L
L
L
L
L
L
L
X
H
L
X
H
H
L
X
H
H
H
L
X
X
ACT  
RD  
ACTIVE (Select bank and row)  
Bank / Row  
Bank / Col  
Bank / Col  
X
1)4)  
1)4)  
1)5)  
1)6)  
1)7)8)  
1)9)  
READ (Select bank and column and start read burst)  
WRITE (Select bank and column and start write burst)  
BURST TERMINATE or DEEP POWER-DOWN  
PRECHARGE (Deactivate row in bank or banks)  
AUTO REFRESH or SELF REFRESH entry  
MODE REGISTER SET  
H
H
H
L
WR  
L
BST  
PRE  
ARF  
MRS  
H
H
L
L
L
Code  
L
H
L
X
L
L
Op-Code  
1) CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER DOWN.  
2) DESELECT and NOP are functionally interchangeable.  
3) BA0, BA1 provide the bank address, and A0 - A12 provide the row address.  
4) BA0, BA1 provide the bank address, A0 - A9 provide the column address; A10 HIGH enables the Auto Precharge feature (non persistent),  
A10 LOW disables the Auto Precharge feature.  
5) This command is BURST TERMINATE if CKE is HIGH, DEEP POWER-DOWN if CKE is LOW. The BURST TERMINATE command is  
defined for READ bursts with Auto Precharge disabled only; it is undefined (and should not be used) for read bursts with Auto Precharge  
enabled, and for write bursts.  
6) A10 LOW: BA0, BA1 determine which bank is precharged.A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t Care”.  
7) This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.  
8) Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.  
9) BA0, BA1 select either the Mode Register (BA0 = 0, BA1 = 0) or the Extended Mode Register (BA0 = 0, BA1 = 1); other combinations of  
BA0, BA1 are reserved; A0 - A12 provide the op-code to be written to the selected mode register.  
TABLE 7  
DM Operation  
Name (Function)  
DM  
DQs Note  
1)  
Write Enable  
L
Valid  
1)  
Write Inhibit  
H
X
1) Used to mask write data provided coincident with the corresponding data  
Address (BA0, BA1, A0 - A12) and command inputs (CKE, CS, RAS, CAS, WE) are all registered on the crossing of the positive  
edge of CK and the negative edge of CK. Figure 6 shows the basic timing parameters, which apply to all commands and  
operations.  
Rev.1.0, 2007-03  
17  
10242006-Y557-TZXW  
 复制成功!