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HYE18L512160BF-7.5 参数 Datasheet PDF下载

HYE18L512160BF-7.5图片预览
型号: HYE18L512160BF-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用512 - Mbit的移动-RAM [DRAMs for Mobile Applications 512-Mbit Mobile-RAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 57 页 / 2043 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet.  
HY[B/E]18L512160BF-7.5  
512-Mbit Mobile-RAM  
FIGURE 42  
Auto Refresh  
#,+  
T20  
T2#  
T2#  
02%  
./0  
!2&  
./0  
./0  
!2&  
./0  
./0  
!#4  
#OMMAND  
!DDRESS  
"A !ꢀ  
2OW N  
2OW N  
0RE !LL  
!ꢃꢄ ꢅ!0ꢆ  
$1  
(IGHꢂ:  
ꢁ $ONgT #ARE  
"A !ꢀ 2OW N ꢁ BANK !ꢀ ROW N  
2.4.9.2  
SELF REFRESH  
The SELF REFRESH command can be used to retain data in  
the Mobile-RAM, even if the rest of the system is powered  
down. When in the self refresh mode, the Mobile-RAM retains  
data without external clocking. The SELF REFRESH  
command is initiated like an AUTO REFRESH command  
except CKE is LOW. Input signals except CKE, are “Don’t  
Care” during SELF REFRESH.  
The procedure for exiting SELF REFRESH requires a stable  
clock prior to CKE returning HIGH. Once CKE is HIGH, NOP  
commands must be issued for tRC because time is required  
for a completion of any internal refresh in progress.  
The use of SELF REFRESH mode introduces the possibility  
that an internally-timed event can be missed when CKE is  
raised for exit from SELF REFRESH mode. Upon exit from  
SELF REFRESH, an extra AUTO REFRESH command is  
recommended.  
FIGURE 43  
SELF REFRESH Entry Command  
#,+  
#+%  
#3  
2!3  
#!3  
7%  
!ꢁꢂ!ꢃꢄ  
"!ꢁꢅ"!ꢃ  
ꢀ $ONgT #ARE  
Rev. 1.22, 2006-12  
40  
01132005-06IU-IGVM  
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