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HYE18L512160BF-7.5 参数 Datasheet PDF下载

HYE18L512160BF-7.5图片预览
型号: HYE18L512160BF-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用512 - Mbit的移动-RAM [DRAMs for Mobile Applications 512-Mbit Mobile-RAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 57 页 / 2043 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet.  
HY[B/E]18L512160BF-7.5  
512-Mbit Mobile-RAM  
FIGURE 40  
WRITE with Auto Precharge Interrupted by WRITE  
#,+  
#OMMAND  
!DDRESS  
72ꢀ!0  
./0  
72)4%  
./0  
./0  
./0  
./0  
./0  
"ANK N  
#OL B  
"ANK M  
#OL X  
T72 ꢄBANK Nꢅ  
$) Xꢆꢇ  
T20 ꢄBANK Nꢅ  
$) Xꢆꢇ  
$) B  
$) Bꢆꢇ  
$) X  
$) Xꢆꢇ  
$1  
ꢁ $ONgT #ARE  
72ꢀ!0 ꢁ 7RITE WITH !UTO 0RECHARGEꢂ 72)4% ꢁ 7RITE WITH OR WITHOUT !UTO 0RECHARGE  
"URST ,ENGTH ꢁ ꢃ IN THE CASE SHOWN  
7RITE WITH !UTO 0RECHARGE TO BANK N IS INTERRUPTED BY SUBSEQUENT 7RITE TO BANK M  
2.4.9  
AUTO REFRESH and SELF REFRESH  
The Mobile-RAM requires a refresh of all rows in a rolling interval. Each refresh is generated in one of two ways:  
by an explicit AUTO REFRESH command  
by an internally timed event in SELF REFRESH mode.  
2.4.9.1  
AUTO REFRESH  
AUTO REFRESH is used during normal operation of the  
Mobile-RAM. The command is nonpersistent, so it must be  
issued each time a refresh is required. A minimum row cycle  
time (tRC) is required between two AUTO REFRESH  
commands. The same rule applies to any access command  
after the AUTO REFRESH operation. All banks must be  
precharged prior to the AUTO REFRESH command.  
The refresh addressing is generated by the internal refresh  
controller. This makes the address bits “Don’t Care” during an  
AUTO REFRESH command. The Mobile-RAM requires  
AUTO REFRESH cycles at an average periodic interval of 7.8  
µs (max.). Partial array mode has no influence on AUTO  
REFRESH mode.  
FIGURE 41  
AUTO REFRESH Command  
#,+  
#+%  
#3  
ꢁ(IGHꢂ  
2!3  
#!3  
7%  
!ꢃꢄ!ꢅꢆ  
"!ꢃꢇ"!ꢅ  
ꢀ $ONgT #ARE  
Rev. 1.22, 2006-12  
39  
01132005-06IU-IGVM  
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