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HYE18L512160BF-7.5 参数 Datasheet PDF下载

HYE18L512160BF-7.5图片预览
型号: HYE18L512160BF-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用512 - Mbit的移动-RAM [DRAMs for Mobile Applications 512-Mbit Mobile-RAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 57 页 / 2043 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet.  
HY[B/E]18L512160BF-7.5  
512-Mbit Mobile-RAM  
TABLE 13  
Timing Parameters for WRITE  
Parameter  
Symbol  
- 7.5  
Units  
Notes  
min.  
max.  
DQ and DQM input setup time  
DQ and DQM input hold time  
DQM write mask latency  
ACTIVE to ACTIVE command period  
ACTIVE to READ or WRITE delay  
ACTIVE to PRECHARGE command period  
WRITE recovery time  
tIS  
tIH  
1.5  
0.8  
0
67  
19  
45  
14  
19  
100k  
ns  
ns  
tDQW  
tRC  
tRCD  
tRAS  
tWR  
tRP  
tCK  
ns  
ns  
ns  
ns  
ns  
1)  
1)  
1)  
1)  
1)  
PRECHARGE command period  
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:no. of clock cycles = specified  
delay / clock period; round up to next integer.  
FIGURE 25  
WRITE Burst (CAS Latency = 2)  
#,+  
T2#$  
T72  
T20  
T2!3  
T2#  
!#4  
./0  
72)4%  
./0  
./0  
./0  
./0  
02%  
./0  
!#4  
#OMMAND  
!DDRESS  
"A !ꢀ  
"A !ꢀ  
#OL N  
"A !ꢀ  
2OW X  
2OW B  
0RE !LL  
!0  
$IS  
!0  
!ꢅꢆ ꢇ!0ꢈ  
$1  
2OW X  
2OW B  
0RE "ANK !  
$) N  
$) Nꢉꢅ  
$) Nꢉꢊ  
$) Nꢉꢄ  
"A !ꢀ #OL N ꢁ BANK !ꢀ COLUMN N  
$) N ꢁ $ATA )N TO COLUMN N  
ꢁ $ONgT #ARE  
"URST ,ENGTH ꢁ ꢂ IN THE CASE SHOWNꢃ  
ꢄ SUBSEQUENT ELEMENTS OF $ATA )N ARE PROVIDED IN THE PROGRAMMED ORDER FOLLOWING $) Nꢃ  
Rev. 1.22, 2006-12  
01132005-06IU-IGVM  
29  
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