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HYE18L512160BF-7.5 参数 Datasheet PDF下载

HYE18L512160BF-7.5图片预览
型号: HYE18L512160BF-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用512 - Mbit的移动-RAM [DRAMs for Mobile Applications 512-Mbit Mobile-RAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 57 页 / 2043 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet.  
HY[B/E]18L512160BF-7.5  
512-Mbit Mobile-RAM  
2.4.5.4  
READ to WRITE  
A READ burst may be followed by or truncated with a WRITE command. The WRITE command can be performed to the same  
or a different (active) bank. Care must be taken to avoid bus contention on the DQs; therefore it is recommended that the DQs  
are held in High-Z state for a minimum of 1 clock cycle. This can be achieved by either delaying the WRITE command, or  
suppressing the data-out from the READ by pulling DQM HIGH two clock cycles prior to the WRITE command, as shown in  
Figure 21. With the registration of the WRITE command, DQM acts as a write mask: when asserted HIGH, input data will be  
masked and no write will be performed.  
FIGURE 21  
READ to WRITE Timing  
#,+  
2%!$  
./0  
./0  
./0  
./0  
72)4%  
./0  
./0  
#OMMAND  
!DDRESS  
$1-  
"A !ꢀ  
#OL N  
"A !ꢀ  
#OL B  
#,ꢃꢈ  
(IGHꢅ:  
$/ N  
$/ Nꢊꢆ  
$) B  
$) Bꢊꢆ  
$) Bꢊꢈ  
$1  
$1  
#,ꢃꢉ  
(IGHꢅ:  
$/ N  
$) B  
$) Bꢊꢆ  
$) Bꢊꢈ  
ꢃ $ONgT #ARE  
"A !ꢀ #OL N ꢁBꢂ ꢃ BANK !ꢀ COLUMN N ꢁBꢂ  
$/ N ꢃ $ATA /UT FROM COLUMN Nꢄ $) B ꢃ $ATA )N TO COLUMN Bꢄ  
$1- IS ASSERTED ()'( TO SET $1S TO (IGHꢅ: STATE FOR ꢆ CLOCK CYCLE PRIOR TO THE 72)4% COMMANDꢇ  
Rev. 1.22, 2006-12  
01132005-06IU-IGVM  
26  
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