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HYE18L512160BF-7.5 参数 Datasheet PDF下载

HYE18L512160BF-7.5图片预览
型号: HYE18L512160BF-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用512 - Mbit的移动-RAM [DRAMs for Mobile Applications 512-Mbit Mobile-RAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 57 页 / 2043 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet.  
HY[B/E]18L512160BF-7.5  
512-Mbit Mobile-RAM  
2.4.5  
READ  
Subsequent to programming the mode register with CAS  
latency and burst length, READ bursts are initiated with a  
READ command, as shown in Figure 11. Basic timings for  
the DQs are shown in Figure 12; they apply to all read  
operations and therefore are omitted from all subsequent  
timing diagrams.  
The starting column and bank addresses are provided with  
the READ command and Auto Precharge is either enabled or  
disabled for that burst access. If Auto Precharge is enabled,  
the row being accessed starts precharge at the completion of  
the burst, provided tRAS has been satisfied. For the generic  
READ commands used in the following illustrations, Auto  
Precharge is disabled.  
FIGURE 11  
READ Command  
#,+  
#+%  
#3  
ꢃ(IGHꢄ  
2!3  
#!3  
7%  
!ꢀꢅ!ꢆ  
#!  
%NABLE !0  
!0  
$ISABLE !0  
"! ꢇ "ANK !DDRESS  
#! ꢇ #OLUMN !DDRESS  
!0 ꢇ !UTO 0RECHARGE  
!ꢂꢀ  
ꢇ $ONgT #ARE  
"!ꢀꢁ"!ꢂ  
"!  
FIGURE 12  
Basic READ Timing Parameters for DQs  
#,+  
T$1:  
$1-  
T!#  
T!#  
T/(  
T(:  
T/(  
T,:  
$/ N  
$/ Nꢁꢂ  
$1  
ꢀ $ONgT #ARE  
Rev. 1.22, 2006-12  
20  
01132005-06IU-IGVM  
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