Data Sheet.
HY[B/E]18L512160BF-7.5
512-Mbit Mobile-RAM
FIGURE 8
Mode Register Definition
#,+
#OMMAND
-23
#ODE
./0
T-2$
6ALID
!DDRESS
6ALID
ꢀ $ONgT #ARE
#ODE ꢀ -ODE 2EGISTER ꢁ %XTENDED -ODE 2EGISTER SELECTION
ꢂ"!ꢃꢄ "!ꢅꢆ AND OPꢇCODE ꢂ!ꢃ ꢇ !ꢅꢈꢆ
TABLE 10
Timing Parameters for Mode Register Set Command
Parameter
Symbol
- 7.5
Units
Notes
min.
max.
MODE REGISTER SET command period
tMRD
2
—
tCK
—
2.4.4
ACTIVE
Before any READ or WRITE commands can be issued to a
bank within the Mobile-RAM, a row in that bank must be
“opened” (activated). This is accomplished via the ACTIVE
command and addresses A0 - A12, BA0 and BA1 (see
Figure 9), which decode and select both the bank and the
row to be activated. After opening a row (issuing an ACTIVE
command), a READ or WRITE command may be issued to
that row, subject to the tRCD specification. A subsequent
ACTIVE command to a different row in the same bank can
only be issued after the previous active row has been “closed”
(precharged).
The minimum time interval between successive ACTIVE
commands to the same bank is defined by tRC. A subsequent
ACTIVE command to another bank can be issued while the
first bank is being accessed, which results in a reduction of
total row-access overhead. The minimum time interval
between successive ACTIVE commands to different banks is
defined by tRRD
FIGURE 9
ACTIVE command
#,+
#+%
#3
ꢆ(IGHꢇ
2!3
#!3
7%
ꢀ $ONgT #ARE
!ꢁꢄ!ꢃꢅ
2!
"!
"! ꢀ "ANK !DDRESS
2! ꢀ 2OW !DDRESS
"!ꢁꢂ"!ꢃ
Rev. 1.22, 2006-12
18
01132005-06IU-IGVM
QIMONDA [ QIMONDA AG ]
