Data Sheet.
HY[B/E]18L512160BF-7.5
512-Mbit Mobile-RAM
Field Bits
Type Description
BT
3
w
Burst Type
0 Sequential
1 Interleaved
BL
[2:0]
w
Burst Length
000 1
001 2
010 4
011 8
111 full page (Sequential burst type only)
Note: All other bit combinations are RESERVED.
2.2.1.1
Burst Length
READ and WRITE accesses to the Mobile-RAM are burst oriented, with the burst length being programmable. The burst length
determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst
lengths of 1, 2, 4, 8 locations are available for both the sequential and interleaved burst types. A full-page burst mode is
available for the sequential burst type.
When a READ or WRITE command is issued, a block of columns equal to the burst length is selected. All accesses for that
burst take place within this block, meaning that the burst wrap within the block if a boundary is reached. The block is uniquely
selected by:
•
•
•
A1-A9 when the burst length is set to two
A2-A9 when the burst length is set to four
A3-A9 when the burst length is set to eight.
The remaining (least significant) address bit(s) is (are) used to select the starting location within the block.
Full page bursts wrap within the page if the boundary is reached. Please note that full page bursts do not self-terminate; this
implies that full-page read or write bursts with Auto Precharge are not legal commands.
TABLE 6
Burst Definition
Burst Length
Starting Column Address
Order of Accesses Within a Burst
A2
A1
A0
Sequential
Interleaved
2
4
0
1
0
1
0
1
0 - 1
1 - 0
0 - 1 - 2 - 3
1 - 2 - 3 - 0
2 - 3 - 0 - 1
3 - 0 - 1 - 2
0 - 1
1 - 0
0 - 1 - 2 - 3
1 - 0 - 3 - 2
2 - 3 - 0 - 1
3 - 2 - 1 - 0
0
0
1
1
Rev. 1.22, 2006-12
10
01132005-06IU-IGVM
QIMONDA [ QIMONDA AG ]
