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HYE18L256160BFX-7.5 参数 Datasheet PDF下载

HYE18L256160BFX-7.5图片预览
型号: HYE18L256160BFX-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用256兆移动-RAM [DRAMs for Mobile Applications 256-Mbit Mobile-RAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 1590 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L256160B[C/F]X-7.5  
256-Mbit Mobile-RAM  
Functional Description  
5. Whenever a boundary of the block is reached within a given sequence, the following access wraps within the  
block.  
2.2.1.2  
Burst Type  
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the  
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the  
burst type and the starting column address, as shown in Table 5.  
2.2.1.3  
Read Latency  
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a READ command and  
the availability of the first piece of output data. The latency can be programmed to 2 or 3 clocks.  
If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available with clock  
edge n + m (for details please refer to the READ command description).  
2.2.1.4  
Write Burst Mode  
When A9 = 0, the burst length programmed via A0-A2 applies to both read and write bursts; when A9 = 1, write  
accesses consist of single data elements only.  
2.2.1.5  
Extended Mode Register  
The Extended Mode Register controls additional low power features of the device. These include the Partial Array  
Self Refresh (PASR, bits A0-A2)), the Temperature Compensated Self Refresh (TCSR, bits A3-A4)) and the drive  
strength selection for the DQs (bits A5-A6). The Extended Mode Register is programmed via the MODE  
REGISTER SET command (with BA0 = 0 and BA1 = 1) and will retain the stored information until it is programmed  
again or the device loses power.  
The Extended Mode Register must be loaded when all banks are idle, and the controller must wait the specified  
time before initiating any subsequent operation. Violating either of these requirements result in unspecified  
operation.  
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.  
EMR  
Extended Mode Register  
(BA[1:0] = 10B)  
BA1  
BA0  
A12  
A11  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
1
0
0
0
0
0
0
0
DS  
(TCSR)  
PASR  
Field Bits Type Description  
DS  
[6:5]  
w
Selectable Drive Strength  
00 Full Drive Strength  
01 Half Drive Strength (default)  
Note:All other bit combinations are RESERVED.  
TCSR [4:3]  
w
Temperature Compensated Self Refresh  
XX Superseded by on-chip temperature sensor (see text)  
Data Sheet  
10  
Rev. 1.11, 2007-01  
07142005-CR47-RB2E  
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