Internet Data Sheet
HYB25D512[400/160/800]C[E/T/F/C](L)
512-Mbit Double-Data-Rate SDRAM
4
Electrical Characteristics
This chapter describes the electrical characteristics.
4.1
Operating Conditions
This chapter contains the operating conditions.
TABLE 16
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit Note/ Test
Condition
min.
typ. max.
Voltage on I/O pins relative to VSS
Voltage on inputs relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Operating temperature (ambient)
Storage temperature (plastic)
VIN, VOUT
VIN
–0.5
–1
–1
–1
0
—
—
—
—
—
—
1
V
DDQ + 0.5
V
+3.6
+3.6
+3.6
+70
+150
—
V
VDD
V
VDDQ
TA
V
°C
°C
W
mA
TSTG
PD
-55
—
Power dissipation (per SDRAM component)
Short circuit output current
IOUT
—
50
—
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This is a stress
rating only, and functional operation should be restricted to recommended operation conditions. Exposure
to absolute maximum rating conditions for extended periods of time may affect device reliability and
exceeding only one of the values may cause irreversible damage to the integrated circuit.
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
TABLE 17
Input and Output Capacitances
Parameter
Symbol
Values
Typ.
Unit
Note/
Test Condition
Min.
Max.
Input Capacitance: CK, CK
CI1
2.0
1.5
—
—
—
—
—
—
—
3.0
2.5
0.25
2.5
3.0
0.5
pF
pF
pF
pF
pF
pF
TSOPII1)
TFBGA 1)
1)
Delta Input Capacitance
CdI1
CI2
Input Capacitance: All other input-only pins
1.5
2.0
—
TFBGA 1)
TSOPII 1)
1)
Delta Input Capacitance: All other input-only CdIO
pins
Rev. 1.31, 2006-09
23
03292006-3TFJ-HNV3
QIMONDA [ QIMONDA AG ]
